• Part: MMBD352WT1
  • Description: Dual Schottky Barrier Diode
  • Manufacturer: Motorola Semiconductor
  • Size: 80.07 KB
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Datasheet Summary

MOTOROLA .. SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352WT1/D Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra- fast switching circuits. - Very Low Capacitance - Less Than 1.0 pF @ Zero Volts - Low Forward Voltage - 0.5 Volts (Typ) @ IF = 10 mA 3 1 2 1 ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Symbol VR Value 7.0 Unit VCC 3 CATHODE/ANODE 2 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina...