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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT5550LT1/D
High Voltage Transistors
NPN Silicon
1 BASE
COLLECTOR 3
MMBT5550LT1 MMBT5551LT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 140 160 6.0 600
2 EMITTER Unit Vdc Vdc Vdc mAdc
1 2
3
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.
MMBT5551LT1 Datasheet
