MMBT5551LT1 Datasheet - WEJ

MMBT5551LT1 TRANSISTOR

RoHS MMBT5551LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Collector Dissipation:Pc-225mW(Ta=25o) .,LTDCollector-Emiller Voltage:VCEO=160V SOT-23 1 1. 2.4 1.3 3 2 1.BASE 2.EMITTER 3.COLLECTOR 2.9 1.9 0.95 0.95 0.4 O Unit:mm CABSOLUTE MAXIMUM RATINGS ICCharacteristic Collector-Base Voltage Collector-Emitter Voltage NEmitter-Base Voltage Collector Current OCollector Dissipation Ta=25oC Junction Temperature RStorage Temperature Symbol VCBO VCEO VEBO Ic PD Tj Tstg Rating.

MMBT5551LT1-WEJ.pdf