MMBT8050LT1 Datasheet (WEJ) - NPN EPITAXIAL SILICON TRANSISTOR

MMBT8050LT1, NPN EPITAXIAL SILICON TRANSISTOR

RoHS MMBT8050LT1 NPN EPITAXIAL SILICON TRANSISTOR WEJ ELECTRONIC CO.,LTD 2WOUTPUT AMPLIFIEROFPORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION Complement to MMPT8550LT1 Collector Current:Ic=500mA Collector Dissipation:Pc=225mW(Tc=25oC) 2.9 1.9 0.95 0.95 0.4 SOT-23 1 1.

2.4 1.3 3 2 1.BASE 2.EMITTER 3.COLLECTOR Unit:mm ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Ta=25oC Junction Tempe