MMBT8050LT1 Datasheet - WEJ

MMBT8050LT1 NPN EPITAXIAL SILICON TRANSISTOR

RoHS MMBT8050LT1 NPN EPITAXIAL SILICON TRANSISTOR WEJ ELECTRONIC CO.,LTD 2WOUTPUT AMPLIFIEROFPORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION Complement to MMPT8550LT1 Collector Current:Ic=500mA Collector Dissipation:Pc=225mW(Tc=25oC) 2.9 1.9 0.95 0.95 0.4 SOT-23 1 1. 2.4 1.3 3 2 1.BASE 2.EMITTER 3.COLLECTOR Unit:mm ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Ta=25oC Junction Tempe.

MMBT8050LT1 Datasheet (169.57 KB)

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Datasheet Details

Part number:

MMBT8050LT1

Manufacturer:

WEJ

File Size:

169.57 KB

Description:

Npn epitaxial silicon transistor.

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MMBT8050LT1 NPN EPITAXIAL SILICON TRANSISTOR WEJ

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