MMBT8099LT1 Datasheet - ON

MMBT8099LT1 Amplifier Transistor

MMBT8099LT1 Preferred Device Amplifier Transistor NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 80 80 6.0 500 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER COLLECTOR 3 http://onsemi.com THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR 5 Board (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance Junction-to-Ambient (Note 1.) Total Dev.

MMBT8099LT1 Features

* d the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high den

MMBT8099LT1_ONSemiconductor.pdf