MMBTA70LT1
MMBTA70LT1 is Transistor manufactured by Motorola Semiconductor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBTA70LT1/D
General Purpose Transistor
PNP Silicon
1 BASE
COLLECTOR 3
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Emitter- Base Voltage Collector Current
- Continuous Symbol VCEO VEBO IC Value
- 40
- 4.0
- 100
2 EMITTER
Unit Vdc Vdc m Adc
CASE 318
- 08, STYLE 6 SOT- 23 (TO
- 236AB)
DEVICE MARKING
MMBTA70LT1 = M2C
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg Symbol 417
- 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Min Max Unit
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage (IC =
- 1.0 m Adc, IB = 0) Emitter- Base Breakdown Voltage (IE =
- 100 µAdc, IC = 0) Collector Cutoff Current (VCB =
- 30 Vdc, IE = 0) V(BR)CEO V(BR)EBO ICBO
- 40
- 4.0
- -
- - 100 Vdc Vdc n Adc
ON CHARACTERISTICS
DC Current Gain (IC =
- 5.0 m Adc, VCE...
