MMSF3300 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMSF3300/D Advance Information Wave FET™ Power Surface Mount Products ™ HDTMOS Single N-Channel Field Effect Transistor Wave FET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on- resistance per silicon area. They are capable of withstanding high energy in the avalanche and mutation modes and the drain- to- source diode has a very low reverse recovery time. Wave FET™ devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc- dc converters, and power management in portable and battery powered products such as puters, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. - Characterized Over a Wide Range of Power Ratings - Ultralow RDS(on) Provides Higher Efficiency and Extends Battery Life in Portable Applications - Logic Level Gate Drive - Can Be Driven by Logic ICs - Diode Is Characterized for Use In Bridge Circuits - Diode Exhibits High Speed, With Soft Recovery - IDSS Specified at Elevated Temperature - Avalanche Energy Specified - Miniature SO- 8 Surface Mount Package - Saves Board Space SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 12.5 m W CASE 751- 06, Style 12 SO- 8 Source Source Source Gate G S 1 2 3 4 8 7 6 5 Drain Drain Drain Drain TOP VIEW MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Drain- to- Source Voltage Drain- to- Gate Voltage Gate- to- Source Voltage Gate- to- Source Operating Voltage Operating and Storage Temperature Range Single Pulse Drain- to- Source Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS =...