* m f = 2080 MHz f = 2200 MHz Zsource VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg. f MHz 2080 2110 2140 2170 2200 Zsource Ω 2.87
* j9.49 3.13
* j9.86 4.05
* j10.90 4.80
* j11.75 5.55
* j11.87 Zload Ω 1.51
* j2.97 1.52
* j2.54 1.59
* j2.
MRF5S21130R3 Datasheet (439.29 KB)
MRF5S21130R3
Motorola
439.29 KB
The rf mosfet line rf power field effect transistor.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5S21130/D MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N Chann.
📁 Related Datasheet
MRF5S21130 The RF MOSFET Line RF Power Field Effect Transistor (Motorola)
MRF5S21130HR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF5S21130HSR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF5S21130S The RF MOSFET Line RF Power Field Effect Transistor (Motorola)
MRF5S21130SR3 The RF MOSFET Line RF Power Field Effect Transistor (Motorola)
MRF5S21150HR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF5S21150HSR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF5S21150R3 RF POWER FIELD EFFECT TRANSISTORS (Motorola Inc)
MRF5S21150SR3 RF POWER FIELD EFFECT TRANSISTORS (Motorola Inc)
MRF5S21045 RF Power Field Effect Transistors (Freescale Semiconductor)
