MRF5S21130S transistor equivalent, the rf mosfet line rf power field effect transistor.
80 MHz Zload* Zo = 25 Ω
f = 2080 MHz f = 2200 MHz Zsource
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg. f MHz 2080 2110 2140 2170 2200 Zsource Ω 2.87
– .
at frequencies from 2110 MRF5S21130SR3 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOS.
10 µF, 35 V Tantalum Capacitors 220 nF Chip Capacitors (1812) 6.8 pF 100B Chip Capacitors 0.1 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 220 µF, 63 V Electrolytic Capacitor, Radial 1 kW, 1/4 W Chip Resistors Value, P/N or DWG 293D1106X9035D 18.
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