MRF6V14300HSR3 Overview
Freescale Semiconductor Technical Data Document Number: 2, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications.
MRF6V14300HSR3 Key Features
- CHANNEL RF POWER MOSFETs
- Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 50 VDD Operation Integrated
- Source Voltage Range for Improved Class C Operation
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
- CASE 465
- 06, STYLE 1 NI
- 780 MRF6V14300HR3
- 06, STYLE 1 NI
- 780S MRF6V14300HSR3
