MRF6V14300HSR3 transistors equivalent, rf power field effect transistors.
MRF6V14300HR3 MRF6V14300HSR3
1400 MHz, 330 W, 50 V PULSED LATERAL N - CHANNEL RF POWER MOSFETs
Characterized with Series Equivalent Large - Signal Impedance Parameters.
operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed a.
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