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MRFG35010MT1 - RF Power Field Effect Transistor

Description

7.5 pF Chip Capacitors, B Case, ATC 0.4 pF Chip Capacitors (0805), AVX 0.2 pF Chip Capacitors (0805), AVX 3.9 pF Chip Capacitors, AVX 10 pF Chip Capacitors, A Case, ATC 100 pF Chip Capacitors, A Case, ATC 100 pF Chip Capacitors, B Case, ATC 1000 pF Chip Capacitors, B Case, ATC 0.1 µF Chip Capacitors

Features

  • 5 0.614 0.613 0.613 0.614 0.614 S21 ∠φ 23.27 22.02 20.80 19.56 18.28 16.96 15.64 14.29 13.00 11.67 10.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRFG35010MT1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 900 mW Power Gain — 10 dB Efficiency — 28% MRFG35010MT1 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT Freescale Semiconductor, Inc... • 9 Watts P1dB @ 3.
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