Datasheet Summary
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRFG35010MT1/D
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications.
- Typical W
- CDMA Performance:
- 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power
- 900 mW Power Gain
- 10 dB Efficiency
- 28%
3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT
Freescale Semiconductor, Inc...
- 9 Watts P1dB @...