MTB50N06V
Key Features
- On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- Static Parameters are the Same for both TMOS V and TMOS E–FET
- Continuous Gate–Source Voltage
- Non–Repetitive (tp ≤ 10 ms) Drain Current
- Continuous @ 25°C Drain Current
- Continuous @ 100°C Drain Current
- The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves
- representing boundaries on device characteristics
