MTB50N06V Key Features
- On-resistance Area Product about One-half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
- Faster Switching than E-FET Predecessors
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- Static Parameters are the Same for both TMOS V and TMOS E-FET
- Surface Mount Package Available in 16 mm 13-inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC
- Continuous Gate-Source Voltage
- Non-Repetitive (tp ≤ 10 ms) Drain Current
- Continuous @ 25°C Drain Current
- Continuous @ 100°C Drain Current
