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Motorola Electronic Components Datasheet

MTB6N60E1 Datasheet

TMOS POWER FET

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Product Preview
TMOS E-FET.
High Energy Power FET
D2PAK-SL Straight Lead
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
G
Order this document
by MTB6N60E1/D
MTB6N60E1
Motorola Preferred Device
TMOS POWER FET
6.0 AMPERES
600 VOLTS
RDS(on) = 1.2 OHM
®
D
CASE 418C–01, Style 2
D2PAK–SL
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M)
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp 10 ms)
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp 10 µs)
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 10 mH, RG = 25 )
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
RθJC
RθJA
RθJA
TL
Value
600
600
± 20
± 40
6.0
4.6
18
125
1.0
2.5
– 55 to 150
405
1.0
62.5
50
260
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
°C
mJ
°C/W
°C
REV 1
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
1


Motorola Electronic Components Datasheet

MTB6N60E1 Datasheet

TMOS POWER FET

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MTB6N60E1
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
600
689
— Vdc
— mV/°C
Zero Gate Voltage Drain Current
(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
µAdc
— — 1.0
— — 50
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
IGSS
— — 100 nAdc
VGS(th)
2.0 3.0 4.0 Vdc
— 7.1 — mV/°C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 6.0 Adc)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ = 125°C)
RDS(on)
VDS(on)
— 0.94 1.2 Ohms
Vdc
— 6.0 8.6
— — 7.6
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(VDS = 300 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc,
RG = 9.1 )
(VDS = 300 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
2.0 5.5
— mhos
1498
2100
pF
— 158 217
— 29 56
— 14 30
— 19 40
— 40 80
— 26 50
— 35.5 50
— 8.1 —
— 14.1 —
— 15.8 —
ns
nC
Vdc
— 0.83 1.5
— 0.72 —
Reverse Recovery Time
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
trr
ta
tb
QRR
LD
— 266 —
ns
— 166 —
— 100 —
— 2.5 — µC
nH
— 4.5 —
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
LS
— nH
— 7.5
2 Motorola TMOS Power MOSFET Transistor Device Data


Part Number MTB6N60E1
Description TMOS POWER FET
Maker Motorola
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