MTB6N60E1 Overview
Key Specifications
Max Operating Temp: 150 °C
Key Features
- Channel Enhancement
- Mode Silicon Gate
| Part | MTB6N60E1 |
|---|---|
| Description | TMOS POWER FET |
| Manufacturer | Motorola Semiconductor |
| Size | 160.57 KB |
Pricing from 0.7794 USD, available from Rochester Electronics and Microchip USA.
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Rochester Electronics | 125 | 100+ : 0.7794 USD 500+ : 0.7015 USD 1000+ : 0.6469 USD 10000+ : 0.5768 USD |
View Offer |
| Microchip USA | 202 | 600+ : 19.3476 USD 1000+ : 19.2074 USD 10000+ : 3.9162 USD |
View Offer |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| MTB6N60E1 | onsemi | High Energy Power FET |