MTB6N60E1 - TMOS POWER FET

Product Overview

Motorola

Part number	MTB6N60E1
Manufacturer	Motorola
File Size	160.57 KB
Description	TMOS POWER FET
Datasheet	MTB6N60E1 Datasheet
Additional preview pages of the MTB6N60E1 datasheet.

es an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 3200 Ciss C,.

📁 Similar Datasheet

MTB600N03N3 - 30V N-CHANNEL MOSFET (Cystech Electonics)
MTB60A03KQ8 - Dual N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB60A06DH8 - Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB60A06Q8 - Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB60B06Q8 - Dual P-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB6D0N03AH8 - N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB6D0N03ATH8 - N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB6D0N03ATV8 - N-Channel Enhancement Mode Power MOSFET (CYStech)

Other Datasheets by Motorola

Published: Sep 13, 2005 |