MTB75N06HD Datasheet Tmos Power Fet

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB75N06HD/D ™ Data Sheet HDTMOS E-FET.

Datasheet Details

Part number	MTB75N06HD
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	342.06 KB
Description	TMOS POWER FET
Datasheet	MTB75N06HD_Motorola.pdf

Key Features

quently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Mos.

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Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	MTB75N06HD	Power MOSFET	ON Semiconductor

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