MTD12N06EZL Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD12N06EZL/D Designer’s™ Data Sheet TMOS E- FET.™ High Energy Power FET DPAK for Surface Mount or Insertion Mount N- Channel Enhancement- Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM This advanced TMOS power FET is designed to withstand high energy in the avalanche and mode and switch efficiently. This new high energy device also offers a gate- to- source zener diode designed for 4 k V ESD protection (human body model). - ESD Protected - 4 k V Human Body Model - 400 V Machine Model - Avalanche Energy Capability - Internal Source- To- Drain Diode Designed to Replace External Zener Transient Suppressor- Absorbs High Energy in the Avalanche Mode MAXIMUM RATINGS (TC = 25°C unless otherwise noted) ® CASE 369A- 13, Style 2 DPAK Surface Mount Rating Symbol Value Unit Drain- Source Voltage Drain- Gate Voltage (RGS = 1.0 MΩ) Gate- Source Voltage - Continuous Gate- Source Voltage - Non- Repetitive (tp ± 50 ms) Drain Current - Continuous Drain...