MTD12N06EZL Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD12N06EZL/D Designer’s™ Data Sheet TMOS E−FET.™ MTD12N06EZL High Energy Power FET DPAK for Surface Mount or Insertion Mount N−Channel Enhancement−Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM This advanced TMOS power FET is designed to withstand high energy in the avalanche and mode and switch efficiently. This new high energy...