MTD2N50E
MTD2N50E is TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM manufactured by Motorola Semiconductor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount
Designer's
Motorola Preferred Device
N- Channel Enhancement- Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- blocking capability without degrading performance over time. In addition this advanced TMOS E- FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
- Robust High Voltage Termination
- Avalanche Energy Specified
- Source- to- Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Surface Mount Package Available in 16 mm, 13- inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
- Replaces MTD2N50 MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain- Source Voltage Drain- Gate Voltage (RGS = 1.0 MΩ) Gate- Source Voltage
- Continuous Gate- Source Voltage
- Non- Repetitive (tp ≤ 10 ms) Drain Current
- Continuous Drain Current
- Continuous @ 100°C Drain Current
- Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum remended pad size Operating and Storage Temperature Range Single Pulse Drain- to- Source Avalanche Energy
- Starting TJ = 25°C (VDD = 75 Vdc, VGS = 10 Vdc, IL = 2.0 Apk, L = 50 m H, RG = 25 Ω) Thermal Resistance
- Junction to Case Thermal Resistance
- Junction to Ambient Thermal Resistance
- Junction to Ambient,...