MTD2N40E Datasheet (Motorola) - TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM

MTD2N40E, TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET DPAK for Surface Mount Designer's MTD2N40E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche and switch efficiently.

This new high energy device also offers a drain to soure diode with fast recovery time.

Designed for high volt

MTD2N40E Features

* are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. VDS = 0 V VGS = 0 V TJ = 25°C 1000 TJ = 25°C VGS = 0 V Ciss C,