* are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. VDS = 0 V VGS = 0 V TJ = 25°C 1000 TJ = 25°C VGS = 0 V Ciss C,
MTD2N40E Datasheet (268.14 KB)
MTD2N40E
Motorola
268.14 KB
Tmos power fet 2.0 amperes 400 volts rds(on) = 3.5 ohm.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET DPAK for Surface Mount Desi.
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