Datasheet Details
- Part number
- MTD2N40E
- Manufacturer
- Motorola
- File Size
- 268.14 KB
- Datasheet
- MTD2N40E_Motorola.pdf
- Description
- TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM
MTD2N40E Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET DPAK for Surface Mount Desi.MTD2N40E Features
* are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. VDS = 0 V VGS = 0 V TJ = 25°C 1000 TJ = 25°C VGS = 0 V Ciss C,MTD2N40E Applications
* such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
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