MTD2N40E TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET DPAK for Surface Mount Desi.

📥 Download Datasheet

MTD2N40E Datasheet Preview — Preview of MTD2N40E PDF

Datasheet Specifications

Part number: MTD2N40E
Manufacturer: Motorola
File Size: 268.14 KB
Datasheet: MTD2N40E_Motorola.pdf
Description: TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM

Features

* are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. VDS = 0 V VGS = 0 V TJ = 25°C 1000 TJ = 25°C VGS = 0 V Ciss C,

Applications

* such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Terminat

MTD2N40E Distributors

📁 Related Datasheet

MTD2001 MTD2001M MTD2002F MTD2003 MTD2003B MTD2003F

📌 All Tags

MTD2N40E TMOS POWER FET 2.0 AMPERES 400 VOLTS RDSon 3.5 OHM Motorola

Motorola MTD2N40E-like datasheet