MTD20N06V Datasheet (Motorola) - TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

MTD20N06V, TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N06V/D TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs.

This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.

Just as with our TMOS E FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation

MTD20N06V Features

* of TMOS V

* On

* resistance Area Product about One

* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

* Faster Switching than E

* FET Predecessors ™ Data Sheet V™ MTD20N06V TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM N