* ads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1600 1400 Ciss C, CAPACITANCE (pF) 1200 1000 800 600 400 200 0 1
MTD20N06HD Datasheet (274.88 KB)
MTD20N06HD
Motorola
274.88 KB
Tmos power fet 20 amperes 60 volts rds(on) = 0.045 ohm.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N06HD/D ™ Data Sheet HDTMOS E-FET.™ Power Field Effect Transistor DPAK for Surfac.
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