MTD20N06HD Datasheet (Motorola) - TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

MTD20N06HD, TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N06HD/D ™ Data Sheet HDTMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD20N06HD Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes.

This new energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for low

MTD20N06HD Features

* ads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1600 1400 Ciss C, CAPACITANCE (pF) 1200 1000 800 600 400 200 0 1