MTD20N06HD TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N06HD/D ™ Data Sheet HDTMOS E-FET.™ Power Field Effect Transistor DPAK for Surfac.

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Datasheet Specifications

Part number: MTD20N06HD
Manufacturer: Motorola
File Size: 274.88 KB
Datasheet: MTD20N06HD_Motorola.pdf
Description: TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

Features

* ads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1600 1400 Ciss C, CAPACITANCE (pF) 1200 1000 800 600 400 200 0 1

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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MTD20N06HD TMOS POWER FET AMPERES VOLTS RDSon 0.045 OHM Motorola

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