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MTD20N06HD - TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

MTD20N06HD Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N06HD/D ™ Data Sheet HDTMOS E-FET.™ Power Field Effect Transistor DPAK for Surfac.

MTD20N06HD Features

* ads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1600 1400 Ciss C, CAPACITANCE (pF) 1200 1000 800 600 400 200 0 1

MTD20N06HD Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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Datasheet Details

Part number
MTD20N06HD
Manufacturer
Motorola
File Size
274.88 KB
Datasheet
MTD20N06HD_Motorola.pdf
Description
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

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TMOS POWER FET AMPERES VOLTS RDSon 0.045 OHM Motorola
Motorola MTD20N06HD-like datasheet