Part number:
MTD20N06HD
Manufacturer:
Motorola
File Size:
274.88 KB
Description:
Tmos power fet 20 amperes 60 volts rds(on) = 0.045 ohm.
Datasheet Details
Part number:
MTD20N06HD
Manufacturer:
Motorola
File Size:
274.88 KB
Description:
Tmos power fet 20 amperes 60 volts rds(on) = 0.045 ohm.
MTD20N06HD, TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N06HD/D ™ Data Sheet HDTMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD20N06HD Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain to source diode with a fast recovery time.
Designed for low
MTD20N06HD Features
* ads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1600 1400 Ciss C, CAPACITANCE (pF) 1200 1000 800 600 400 200 0 1
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