MTD2955V Datasheet (Motorola) - Power Field Effect Transistor

MTD2955V, Power Field Effect Transistor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2955V/D TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs.

This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.

Just as with our TMOS E FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation m

MTD2955V Features

* of TMOS V

* On

* resistance Area Product about One

* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

* Faster Switching than E

* FET Predecessors ™ Data Sheet V™ MTD2955V TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM P