* ectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elemen
MTD2955E Datasheet (243.70 KB)
MTD2955E
Motorola
243.70 KB
Tmos power fet 12 amperes 60 volts rds(on) = 0.3 ohm.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2955E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mo.
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