MTD2955E Datasheet - Motorola

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MTD2955E TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2955E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mo.

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Datasheet Details

Part number:

MTD2955E

Manufacturer:

Motorola

File Size:

243.70 KB

Description:

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

Features

* ectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elemen

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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MTD2955E TMOS POWER FET AMPERES VOLTS RDSon 0.3 OHM Motorola

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