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MTD2955E - TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

MTD2955E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2955E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mo.

MTD2955E Features

* ectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elemen

MTD2955E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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Datasheet Details

Part number
MTD2955E
Manufacturer
Motorola
File Size
243.70 KB
Datasheet
MTD2955E_Motorola.pdf
Description
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

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Motorola MTD2955E-like datasheet