MTD2955E Datasheet (Motorola) - TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

MTD2955E, TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2955E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD2955E Motorola Preferred Device P Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.

The new energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for low volt

MTD2955E Features

* ectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elemen