Datasheet Specifications
- Part number
- MTD20N06HDL
- Manufacturer
- Motorola
- File Size
- 293.48 KB
- Datasheet
- MTD20N06HDL_Motorola.pdf
- Description
- Power MOSFET
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document bt MTD20N06HDL/D Advance Information HDTMOS E-FETāā™ High Density Power FET DPAK for Sur.
Features
* speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approApplications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin agaiMTD20N06HDL Distributors
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