* igure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 2500 Ciss 2000 C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 1500 Crss 1000 Ciss 500 Crss
MTD20P06HDL Datasheet (308.53 KB)
MTD20P06HDL
Motorola
308.53 KB
Tmos power fet logic level 15 amperes 60 volts rds(on) = 175 mohm.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20P06HDL/D ™ Data Sheet HDTMOS E-FET ™ High Density Power FET DPAK for Surface Moun.
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