Datasheet Details
- Part number
- MTD20P06HDL
- Manufacturer
- Motorola
- File Size
- 308.53 KB
- Datasheet
- MTD20P06HDL_Motorola.pdf
- Description
- TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM
MTD20P06HDL Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20P06HDL/D ™ Data Sheet HDTMOS E-FET ™ High Density Power FET DPAK for Surface Moun.
MTD20P06HDL Features
* igure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 2500 Ciss 2000 C, CAPACITANCE (pF)
VDS = 0 V
VGS = 0 V
TJ = 25°C
1500 Crss 1000
Ciss
500 Crss
MTD20P06HDL Applications
* in power supplies, converters and PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.
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