MTD20P06HDL TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20P06HDL/D ™ Data Sheet HDTMOS E-FET ™ High Density Power FET DPAK for Surface Moun.

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Datasheet Specifications

Part number: MTD20P06HDL
Manufacturer: Motorola
File Size: 308.53 KB
Datasheet: MTD20P06HDL_Motorola.pdf
Description: TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM

Features

* igure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 2500 Ciss 2000 C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 1500 Crss 1000 Ciss 500 Crss

Applications

* in power supplies, converters and PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.

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MTD20P06HDL TMOS POWER FET LOGIC LEVEL AMPERES VOLTS RDSon 175 MOHM Motorola

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