MTD20P06HDL Datasheet - Motorola

MTD20P06HDL TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20P06HDL/D ™ Data Sheet HDTMOS E-FET ™ High Density Power FET DPAK for Surface Mount Designer's MTD20P06HDL Motorola Preferred Device P Channel Enhancement Mode Silicon Gate This advanced high cell density HDTMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recover.

MTD20P06HDL Features

* igure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 2500 Ciss 2000 C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 1500 Crss 1000 Ciss 500 Crss

MTD20P06HDL_Motorola.pdf