.
NXP
PSMN1R2-25YL - N-channel 25 V 1.2 MOhm Logic Level MOSFET
PSMN1R2-25YL www.DataSheet4U.com N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 .
ATMEL Corporation
U643 - Flasher/ 30-mohm Shunt
U643B Flasher, 30-mW Shunt Description The bipolar integrated circuit U643B is used in relaycontrolled automotive flashers where a high-level EMC is r.
Infineon Technologies AG
BTS5234L - Smart High-Side Power Switch PROFET TWO CHANNELS/ 60MOHM
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Motorola
MTD20P06HDL - TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20P06HDL/D ™ Data Sheet HDTMOS E-FET ™ High Density Power FET DPAK for Surface Moun.
NXP
PSMN013-100PS - N-channel 100V 13.9mOhm Standard Level MOSFET
PSMN013-100PS N-channel 100V 13.9mΩ standard level MOSFET in TO220. Rev. 02 — 22 January 2010 www.DataSheet4U.com Product data sheet 1. Product prof.
Freescale Semiconductor
MC07XSF517 - Triple 7.0 mOhm and Dual 17 mOhm High Side Switch
Freescale Semiconductor Advance Information Document order number: MC07XSF517 Rev. 2.0, 9/2013 Triple 7.0 mOhm and Dual 17 mOhm High Side Switch Th.
NXP
PHN708 - 7 N-channel 80 mohm FET array enhancement mode MOS transistors
DISCRETE SEMICONDUCTORS DATA SHEET PHN708 7 N-channel 80 mΩ FET array enhancement mode MOS transistors Product specification Supersedes data of 1997 .
International Rectifier
IRF7457 - Power MOSFET(Vdss=20V/ Rds(on)max=7.0mohm/ Id=15A)
PD- 93882D SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l IRF74.
Infineon Technologies AG
BTS5234G - Smart High-Side Power Switch PROFET TWO CHANNELS/ 60MOHM
.
Infineon Technologies AG
BTS5434G - Smart High-Side Power Switch PROFET TWO CHANNELS/ 60MOHM
.
Motorola
MTP55N06Z - TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP55N06Z/D Advance Information TMOS E-FET.™ Power Field Effect Transistor N–Channel .
ST Microelectronics
STE180N10 - N - CHANNEL 100V - 5.5 mohm - 180A - ISOTOP POWER MOSFET
® STE180N10 N - CHANNEL 100V - 5.5 mΩ - 180A - ISOTOP POWER MOSFET TYPE STE180N10 s s s s s V DSS 100 V R DS(on) < 7 mΩ ID 180 A TYPICAL RDS(on).
ST Microelectronics
STE180NE10 - N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET POWER MOSFET
N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET™ POWER MOSFET TYPE STE180NE10 s s s s s STE180NE10 VDSS 100 V RDS(on) < 6 mΩ ID 180A TYPICAL RDS(o.
NXP
PSMN8R2-80YS - N-channel LFPAK 80 V 8.5 MOhm Standard Level MOSFET
PSMN8R2-80YS www.DataSheet4U.com N-channel LFPAK 80 V 8.5 mΩ standard level MOSFET Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 .
NXP
PSMN7R0-100ES - N-channel 100V 6.8 MOhm Standard Level MOSFET
PSMN7R0-100ES Rev. 03 — 23 February 2010 www.DataSheet4U.com N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK. Product data sheet 1. Product pr.
NXP
PSMN7R0-100PS - N-channel 100V 6.8 MOhm Standard Level MOSFET
PSMN7R0-100PS N-channel 100V 6.8 mΩ standard level MOSFET in TO220 Rev. 02 — 7 January 2010 www.DataSheet4U.com Product data sheet 1. Product profil.
NXP Semiconductors
PSMN7R0-40LS - N-channel QFN3333 40V 7.0mOhm standard level MOSFET
DFN3333-8 PSMN7R0-40LS N-channel DFN3333-8 40 V 7.0 mΩ standard level MOSFET Rev. 3 — 13 December 2011 Product data sheet 1. Product profile 1.1.
Freescale Semiconductor
06XSD200 - Dual 6.0 mOhm High Side Switch
Freescale Semiconductor Advance Information Document Number: MC06XSD200 Rev. 2.0, 9/2013 Dual 6.0 mOhm High Side Switch The 06XSD200 device is part.
Freescale Semiconductor
07XSF517 - Triple 7.0 mOhm and Dual 17 mOhm High Side Switch
Freescale Semiconductor Advance Information Document order number: MC07XSF517 Rev. 2.0, 9/2013 Triple 7.0 mOhm and Dual 17 mOhm High Side Switch Th.
Freescale Semiconductor
10XSD200 - Dual 10 mOhm High Side Switch
Freescale Semiconductor Advance Information Document Number: MC10XSD200 Rev. 2.0, 9/2013 Dual 10 mOhm High Side Switch The 10XSD200 device is part .