C3M0040120K - 1200V 40mohm Silicon Carbide Power MOSFET
C3M0040120K Features
* Drain (Pin 1, TAB)
* 3rd generation SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
