C3M0040120K Datasheet, Mosfet, Wolfspeed

C3M0040120K Features

• Mosfet Drain (Pin 1, TAB)
• 3rd generation SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and sour

PDF File Details

Part number:

C3M0040120K

Manufacturer:

Wolfspeed

File Size:

925.26kb

Download:

📄 Datasheet

Description:

1200v 40mohm silicon carbide power mosfet.

C3M0040120K Application

• Applications
• Solar inverters
• EV motor drive
• High voltage DC/DC converters
• Switched mode power supplies

TAGS

C3M0040120K

Wolfspeed

📁 Related Datasheet

C3M0040120D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0040120D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • High blo.

C3M0040120D - Silicon Carbide Power MOSFET (Cree)
VDS 1200 V C3M0040120D ID @ 25˚C 66 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 40 mΩ N-Channel Enhancement Mode .

C3M0040120J1 - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0040120J1 Silicon Carbide Power MOSFET C3MTM MOSFET Technology N -Chan nel Enchancement Mode Features Package • 3rd generation SiC MOS.

C3M0040120J2 - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0040120J2 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Optimized package w.

C3M0040120K - Silicon Carbide Power MOSFET (Cree)
VDS 1200 V C3M0040120K ID @ 25˚C 66 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 40 mΩ N-Channel Enhancement Mode .

C3M0040120K1 - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0040120K1 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • Optimized package with separate driver source pin • Lower profile TO.

C3M0045065D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0045065D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd Generation SiC MOSFET technology • High bl.

C3M0045065J1 - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0045065J1 Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Optimiz.

C3M0045065K - Silicon Carbide Power MOSFET (Cree)
VDS 650 V C3M0045065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) 49 A 45 mΩ N-Channel Enhancement Mode Fea.

C3M0045065K - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0045065K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Drain (Pin 1, TAB) Features • C3MTM Silicon Carbide (Si.