C3M0040120D Datasheet, Mosfet, Wolfspeed

C3M0040120D Features

• Mosfet
• 3rd generation SiC MOSFET technology
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• Fast intrinsic diode

PDF File Details

Part number:

C3M0040120D

Manufacturer:

Wolfspeed

File Size:

811.83kb

Download:

📄 Datasheet

Description:

Silicon carbide power mosfet.

C3M0040120D Application

• Applications
• Solar inverters
• EV motor drive
• High voltage DC/DC converters
• Switched mode power supplies Bene

TAGS

C3M0040120D

Wolfspeed

📁 Related Datasheet

C3M0040120D - Silicon Carbide Power MOSFET (Cree)
VDS 1200 V C3M0040120D ID @ 25˚C 66 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 40 mΩ N-Channel Enhancement Mode .

C3M0040120J1 - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0040120J1 Silicon Carbide Power MOSFET C3MTM MOSFET Technology N -Chan nel Enchancement Mode Features Package • 3rd generation SiC MOS.

C3M0040120J2 - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0040120J2 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Optimized package w.

C3M0040120K - 1200V 40mohm Silicon Carbide Power MOSFET (Wolfspeed)
C3M0040120K 1200V 40mohm Silicon Carbide Power MOSFET N-Channel Enhancement Mode Tab Drain Features Drain (Pin 1, TAB) • 3rd generation SiC MOSF.

C3M0040120K - Silicon Carbide Power MOSFET (Cree)
VDS 1200 V C3M0040120K ID @ 25˚C 66 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 40 mΩ N-Channel Enhancement Mode .

C3M0040120K1 - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0040120K1 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • Optimized package with separate driver source pin • Lower profile TO.

C3M0045065D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0045065D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd Generation SiC MOSFET technology • High bl.

C3M0045065J1 - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0045065J1 Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Optimiz.

C3M0045065K - Silicon Carbide Power MOSFET (Cree)
VDS 650 V C3M0045065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) 49 A 45 mΩ N-Channel Enhancement Mode Fea.

C3M0045065K - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0045065K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Drain (Pin 1, TAB) Features • C3MTM Silicon Carbide (Si.