Part number:
C3M0040120D
Manufacturer:
Wolfspeed
File Size:
811.83 KB
Description:
Silicon carbide power mosfet.
C3M0040120D Datasheet (811.83 KB)
| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
Wolfspeed | C3M0040120D | 1200V 40MOHM SIC MOSFET | DigiKey | 109 | 120 units |
$17.33
|
🛒 Buy Now |
C3M0040120D Datasheet (811.83 KB)
C3M0040120D
Wolfspeed
811.83 KB
Silicon carbide power mosfet.
* 3rd generation SiC MOSFET technology
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant Part Number C3M0040120D Package TO 247-3
📁 Related Datasheet
C3M0040120D - Silicon Carbide Power MOSFET
(Cree)
VDS
1200 V
C3M0040120D
ID @ 25˚C
66 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
40 mΩ
N-Channel Enhancement Mode
.
C3M0040120J1 - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0040120J1
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology N -Chan nel Enchancement Mode
Features
Package
• 3rd generation SiC MOS.
C3M0040120J2 - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0040120J2
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
Features
• 3rd generation SiC MOSFET technology
• Optimized package w.
C3M0040120K - 1200V 40mohm Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0040120K
1200V 40mohm Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
Tab Drain
Features
Drain (Pin 1, TAB)
• 3rd generation SiC MOSF.
C3M0040120K - Silicon Carbide Power MOSFET
(Cree)
VDS
1200 V
C3M0040120K
ID @ 25˚C
66 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
40 mΩ
N-Channel Enhancement Mode
.
C3M0040120K1 - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0040120K1
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
Features
• Optimized package with separate driver source pin
• Lower profile TO.
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