C3M0032120J1 Datasheet - CREE

datasheet Preview Page 1 from Datasheet4u.com

C3M0032120J1 Silicon Carbide Power MOSFET

VDS 1200 V C3M0032120J1 ID @ 25˚C 68 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 32 mΩ N-Channel Enhancement Mode .

C3M0032120J1-CREE.pdf

C3M0032120J1 Datasheet Preview — Preview of C3M0032120J1 PDF

Datasheet Details

Part number:

C3M0032120J1

Manufacturer:

CREE

File Size:

958.45 KB

Description:

Silicon Carbide Power MOSFET

Features

* Package
* 3rd generation SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances

Applications

* TAB Drain 1 2 34 5 6 7 G KS S S S S S Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7)
* Solar inverters
* EV motor drive
* High voltage DC/DC converters
* Switched mode power supplies
* Load switch Part Number C3M0032120J1 P

C3M0032120J1 Distributors

📁 Related Datasheet

C3M0032120J2 C3M0032120K1 C3M0015065D C3M0015065K C3M0016120D C3M0016120K

📌 All Tags

C3M0032120J1 Silicon Carbide Power MOSFET CREE

CREE C3M0032120J1-like datasheet