Datasheet Details
- Part number
- C3M0032120J1
- Manufacturer
- CREE
- File Size
- 958.45 KB
- Datasheet
- C3M0032120J1-CREE.pdf
- Description
- Silicon Carbide Power MOSFET
C3M0032120J1 Description
VDS 1200 V C3M0032120J1 ID @ 25˚C 68 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 32 mΩ N-Channel Enhancement Mode .
C3M0032120J1 Features
* Package
* 3rd generation SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
C3M0032120J1 Applications
* TAB Drain
1 2 34 5 6 7 G KS S S S S S
Drain (TAB)
Gate (Pin 1)
Driver Source (Pin 2)
Power Source (Pin 3,4,5,6,7)
* Solar inverters
* EV motor drive
* High voltage DC/DC converters
* Switched mode power supplies
* Load switch
Part Number C3M0032120J1
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