* Package
* C3MTM SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
C3M0030090K Datasheet (1.04 MB)
C3M0030090K
CREE
1.04 MB
Silicon carbide power mosfet.
VDS
900 V
C3M0030090K
ID @ 25˚C
73 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
30 mΩ
N-Channel Enhancement Mode
.
📁 Related Datasheet
C3M0030090K - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0030090K
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode
Drain (Pin 1, TAB)
Features • C3MTM SiC MOSFET technolo.
C3M0032120D - Silicon Carbide Power MOSFET
(CREE)
VDS 1200 V
C3M0032120D
ID @ 25˚C
63 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 32 mΩ
N-Channel Enhancement Mode .
C3M0032120D - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0032120D
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode
Features • 3rd generation SiC MOSFET technology • High bl.
C3M0032120J1 - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0032120J1
Silicon Carbide Power C3MTM MOSFET Technology
N-Channel Enhancement Mode
TAB
Drain
Drain
Features
(TAB)
• 3rd generation Silicon .
C3M0032120J1 - Silicon Carbide Power MOSFET
(CREE)
VDS
1200 V
C3M0032120J1
ID @ 25˚C
68 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
32 mΩ
N-Channel Enhancement Mode .
C3M0032120J2 - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0032120J2
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
Features
• 3rd generation SiC MOSFET technology
• Optimized package w.
C3M0032120K - Silicon Carbide Power MOSFET
(CREE)
VDS
1200 V
C3M0032120K
ID @ 25˚C
63 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
32 mΩ
N-Channel Enhancement Mode
.
C3M0032120K - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0032120K
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
Features
Package
• 3rd generation SiC MOSFET technology
• Optimized pa.
