C3M0032120J1 - Silicon Carbide Power MOSFET
C3M0032120J1 Features
* (TAB)
* 3rd generation Silicon Carbide (SiC) MOSFET technology
* Optimized package with separate driver source pin
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Q
