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C3M0040120K

Silicon Carbide Power MOSFET

C3M0040120K Features

* Package

* 3rd generation SiC MOSFET technology

* Optimized package with separate driver source pin Tab

* 8mm of creepage distance between drain and source Drain

* High blocking voltage with low on-resistance

* High-speed switching with low capacitances

C3M0040120K Datasheet (0.99 MB)

Preview of C3M0040120K PDF

Datasheet Details

Part number:

C3M0040120K

Manufacturer:

Cree

File Size:

0.99 MB

Description:

Silicon carbide power mosfet.
VDS 1200 V C3M0040120K ID @ 25˚C 66 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 40 mΩ N-Channel Enhancement Mode .

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C3M0040120K Silicon Carbide Power MOSFET Cree

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