C3M0040120K Silicon Carbide Power MOSFET

Cree

Description

VDS 1200 V C3M0040120K ID @ 25˚C 66 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 40 mΩ N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: C3M0040120K
Manufacturer: Cree
File Size: 0.99 MB
Datasheet: C3M0040120K-Cree.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* 3rd generation SiC MOSFET technology
* Optimized package with separate driver source pin Tab
* 8mm of creepage distance between drain and source Drain
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances

Applications

* Solar inverters
* EV motor drive
* High voltage DC/DC converters
* Switched mode power supplies
* Load switch 1 234 D SSG Part Number C3M0040120K Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Package TO 247-4 Marking C3M004

C3M0040120K Distributors

📁 Related Datasheet

C3M0040120K1 C3M0040120D C3M0040120J1 C3M0040120J2 C3M0045065D C3M0045065J1

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C3M0040120K Silicon Carbide Power MOSFET Cree

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