* Package
* C3MTM SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
C3M0045065K Datasheet (1.05 MB)
C3M0045065K
Cree
1.05 MB
Silicon carbide power mosfet.
VDS
650 V
C3M0045065K
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
ID @ 25˚C RDS(on)
49 A 45 mΩ
N-Channel Enhancement Mode
Fea.
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C3M0040120D
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