| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
Wolfspeed | C3M0065090D | SICFET N-CH 900V 36A TO247-3 | DigiKey | 2454 | 120 units |
$11.39
|
🛒 Buy Now |
Download Datasheet (742.68 KB)
C3M0065090D
Cree
742.68 KB
Silicon carbide power mosfet.
VDS
900 V
C3M0065090D
ID @ 25˚C
36 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS.
(on)
65 mΩ
N-Channel Enhancement Mode
Features
Package
* C3M SiC MOSFET technology * H.
📁 Related Datasheet
C3M0065090D - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0065090D
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode
Features • C3M SiC MOSFET technology • High blocking volta.
C3M0065090J - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0065090J
Silicon Carbide Power MOSFET C3MTM MOSFET Technology
N-Channel Enhancement Mode TAB Drain
Drain
Features
(TAB)
• New C3M Silicon Car.
C3M0065090J - Silicon Carbide Power MOSFET
(Cree)
C3M0065090J
VDS ID @ 25˚C
900 V 35 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
65 mΩ
N-Channel Enhancement Mode
Fe.
C3M0065100J - Silicon Carbide Power MOSFET
(CREE)
VDS
1000 V
C3M0065100J
ID @ 25˚C
32 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
65 mΩ
N-Channel Enhancement Mode
.
C3M0065100J - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0065100J
Silicon Carbide Power MOSFET C3MTM MOSFET Technology
N-Channel Enhancement Mode
Features
TAB Drain
Drain
(TAB)
• C3MTM SiC MOSFET t.
C3M0065100K - Silicon Carbide Power MOSFET
(Cree)
VDS
1000 V
C3M0065100K
ID @ 25˚C
32 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
65 mΩ
N-Channel Enhancement Mode
.
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