* Package
* 3rd Generation SiC MOSFET technology
* High blocking voltage with low on-resistance
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant Benefits
* Higher syste
C3M0120065D Datasheet (922.84 KB)
C3M0120065D
Cree
922.84 KB
Silicon carbide power mosfet.
VDS
650 V
C3M0120065D
ID @ 25˚C
22 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
120 mΩ
N-Channel Enhancement Mode
.
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