Datasheet Details
- Part number
- C3M0120065D
- Manufacturer
- Cree
- File Size
- 922.84 KB
- Datasheet
- C3M0120065D-Cree.pdf
- Description
- Silicon Carbide Power MOSFET
C3M0120065D Description
VDS 650 V C3M0120065D ID @ 25˚C 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode .
C3M0120065D Features
* Package
* 3rd Generation SiC MOSFET technology
* High blocking voltage with low on-resistance
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant
Benefits
* Higher syste
C3M0120065D Applications
* Solar inverters
* DC/DC converters
* Switch Mode Power Supplies
* EV battery chargers
* UPS
Part Number C3M0120065D
Package TO-247-3
Marking C3M0120065D
Maximum Ratings
Symbol
Parameter
VDSS VGS
ID
ID(pulse) PD
TJ , Tstg TL Md
Drain - Source Voltage,
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