Part number:
C3M0160120J
Manufacturer:
Wolfspeed
File Size:
857.96 KB
Description:
Silicon carbide power mosfet.
C3M0160120J Datasheet (857.96 KB)
* 3rd generation Solicon Carbide (SiC) MOSFET technology
* Low impedance package with driver source pin
* 7mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
* F
C3M0160120J Datasheet (857.96 KB)
C3M0160120J
Wolfspeed
857.96 KB
Silicon carbide power mosfet.
📁 Related Datasheet
C3M0160120D - N-Channel Power MOSFET
(Wolfspeed)
C3M0160120D
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode
Features • C3MTM Silicon Carbide (SiC) MOSFET technology •.
C3M0160120K1 - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0160120K1
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
Features
• Optimized package with separate driver source pin
• Lower profile TO.
C3M0120065D - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0120065D
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode
Features • 3rd Generation SiC MOSFET technology • High bl.
C3M0120065D - Silicon Carbide Power MOSFET
(Cree)
VDS
650 V
C3M0120065D
ID @ 25˚C
22 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
120 mΩ
N-Channel Enhancement Mode
.
C3M0120065J - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0120065J
Silicon Carbide Power MOSFET C3MTM MOSFET Technology
TAB
N-Channel Enhancement Mode
Drain
Drain (TAB)
Features • 3rd Generation SiC .
C3M0120065K - Silicon Carbide Power MOSFET
(Cree)
VDS
650 V
C3M0120065K
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
ID @ 25˚C RDS(on)
22 A 120 mΩ
N-Channel Enhancement Mode
Fe.
C3M0120065K - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0120065K
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode
Drain (Pin 1, TAB)
Features • C3MTM SiC MOSFET technolo.
C3M0120065L - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0120065L
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology
N-Channel Enhancement Mode F eature s
• 3rd generation SiC MOSFET technology
.
