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C3M0160120J Silicon Carbide Power MOSFET

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Description

C3M0160120J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain .

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Datasheet Specifications

Part number
C3M0160120J
Manufacturer
Wolfspeed
File Size
857.96 KB
Datasheet
C3M0160120J-Wolfspeed.pdf
Description
Silicon Carbide Power MOSFET

Features

* 3rd generation Solicon Carbide (SiC) MOSFET technology
* Low impedance package with driver source pin
* 7mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
* F

Applications

* Renewable energy
* High voltage DC/DC converters
* Switch Mode Power Supplies
* UPS Key Parameters Benefits
* Reduce switching losses and minimize gate ringing
* Higher system efficiency
* Reduce cooling requirements
* Increase pow

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