C3M0120065D Datasheet, Mosfet, Wolfspeed

C3M0120065D Features

• Mosfet
• 3rd Generation SiC MOSFET technology
• High blocking voltage with low on-resistance
• High speed switching with low capacitances
• Fast intrinsic diode

PDF File Details

Part number:

C3M0120065D

Manufacturer:

Wolfspeed

File Size:

770.09kb

Download:

📄 Datasheet

Description:

Silicon carbide power mosfet.

C3M0120065D Application

• Applications
• Solar inverters
• DC/DC converters
• Switch Mode Power Supplies
• EV battery chargers
• UPS

TAGS

C3M0120065D

Wolfspeed

📁 Related Datasheet

C3M0120065D - Silicon Carbide Power MOSFET (Cree)
VDS 650 V C3M0120065D ID @ 25˚C 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode .

C3M0120065J - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0120065J Silicon Carbide Power MOSFET C3MTM MOSFET Technology TAB N-Channel Enhancement Mode Drain Drain (TAB) Features • 3rd Generation SiC .

C3M0120065K - Silicon Carbide Power MOSFET (Cree)
VDS 650 V C3M0120065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) 22 A 120 mΩ N-Channel Enhancement Mode Fe.

C3M0120065K - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0120065K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Drain (Pin 1, TAB) Features • C3MTM SiC MOSFET technolo.

C3M0120065L - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0120065L Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode F eature s • 3rd generation SiC MOSFET technology .

C3M0120090D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0120090D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • C3M SiC MOSFET technology • High blocking volta.

C3M0120090D - Silicon Carbide Power MOSFET (Cree)
VDS 900 V C3M0120090D ID @ 25˚C 23 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode .

C3M0120090J - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0120090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Features • New C3M SiC MOSFET technology • Hig.

C3M0120090J - Silicon Carbide Power MOSFET (Cree)
C3M0120090J VDS ID @ 25˚C 900 V 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode F.

C3M0120100J - Silicon Carbide Power MOSFET (CREE)
VDS 1000 V C3M0120100J ID @ 25˚C 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode.