* Package
* C3MTM SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
C3M0120100K Datasheet (923.37 KB)
C3M0120100K
CREE
923.37 KB
Silicon carbide power mosfet.
VDS
1000 V
C3M0120100K
ID @ 25˚C
22 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
120 mΩ
N-Channel Enhancement Mode .
📁 Related Datasheet
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VDS 1000 V
C3M0120100J
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N-Channel Enhancement Mode.
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C3M0120065D
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