C3M0021120D Datasheet - CREE

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C3M0021120D Silicon Carbide Power MOSFET

VDS 1200 V C3M0021120D ID @ 25˚C 100 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 21 mΩ N-Channel Enhancement Mode.

C3M0021120D-CREE.pdf

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Datasheet Details

Part number:

C3M0021120D

Manufacturer:

CREE

File Size:

800.04 KB

Description:

Silicon Carbide Power MOSFET

Features

* Package
* 3rd generation SiC MOSFET technology
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits
* Red

Applications

* Solar inverters
* EV motor drive
* High voltage DC/DC converters
* Switched mode power supplies
* Load switch Part Number Package Marking C3M0021120D Maximum Ratings (TC = 25 ˚C unless otherwise specified) TO 247-3 C3M0021120D Symbol Paramete

C3M0021120D Distributors

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C3M0021120D Silicon Carbide Power MOSFET CREE

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