C3M0032120D Datasheet - CREE

C3M0032120D, Silicon Carbide Power MOSFET

VDS 1200 V C3M0032120D ID @ 25˚C 63 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 32 mΩ N-Channel Enhancement Mode .

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C3M0032120D-CREE.pdf

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Datasheet Details

Part number:

C3M0032120D

Manufacturer:

CREE

File Size:

786.19 KB

Description:

Silicon Carbide Power MOSFET

Features

* Package
* 3rd generation SiC MOSFET technology
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits
* Re

Applications

* Solar inverters
* EV motor drive
* High voltage DC/DC converters
* Switched mode power supplies Part Number Package Marking C3M0032120D Maximum Ratings (TC = 25 ˚C unless otherwise specified) TO 247-3 C3M0032120D Symbol Parameter Value Unit Test

C3M0032120D Distributors

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C3M0032120D Silicon Carbide Power MOSFET CREE

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