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C3M0032120D

Silicon Carbide Power MOSFET

C3M0032120D Features

* Package

* 3rd generation SiC MOSFET technology

* High blocking voltage with low on-resistance

* High-speed switching with low capacitances

* Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits

* Re

C3M0032120D Datasheet (786.19 KB)

Preview of C3M0032120D PDF

Datasheet Details

Part number:

C3M0032120D

Manufacturer:

CREE

File Size:

786.19 KB

Description:

Silicon carbide power mosfet.
VDS 1200 V C3M0032120D ID @ 25˚C 63 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 32 mΩ N-Channel Enhancement Mode .

📁 Related Datasheet

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C3M0032120J2 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Optimized package w.

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VDS 1200 V C3M0032120K ID @ 25˚C 63 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 32 mΩ N-Channel Enhancement Mode .

C3M0032120K - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0032120K Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • Optimized pa.

C3M0032120K1 - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0032120K1 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • Optimized package with separate driver source pin • Lower profile TO.

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VDS 900 V C3M0030090K ID @ 25˚C 73 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 30 mΩ N-Channel Enhancement Mode .

TAGS

C3M0032120D Silicon Carbide Power MOSFET CREE

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