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C3M0060065D

Silicon Carbide Power MOSFET

C3M0060065D Features

* Package

* 3rd Generation SiC MOSFET technology

* High blocking voltage with low on-resistance

* High speed switching with low capacitances

* Fast intrinsic diode with low reverse recovery (Qrr)

* Halogen free, RoHS compliant Benefits

* Higher syste

C3M0060065D Datasheet (1.04 MB)

Preview of C3M0060065D PDF

Datasheet Details

Part number:

C3M0060065D

Manufacturer:

CREE

File Size:

1.04 MB

Description:

Silicon carbide power mosfet.
VDS 650 V C3M0060065D ID @ 25˚C 29 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 60 mΩ N-Channel Enhancement Mode .

📁 Related Datasheet

C3M0060065D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0060065D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd Generation SiC MOSFET technology • High bl.

C3M0060065J - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0060065J Silicon Carbide Power MOSFET C3MTM MOSFET Technology TAB N-Channel Enhancement Mode Drain Drain (TAB) Features • 3rd Generation SiC .

C3M0060065K - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0060065K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Drain (Pin 1, TAB) Features • 3rd Generation SiC MOSFET.

C3M0060065K - Silicon Carbide Power MOSFET (CREE)
VDS C3M0060065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) N-Channel Enhancement Mode Features Package 650 .

C3M0060065L - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0060065L Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode F eature s • 3rd generation SiC MOSFET technology .

C3M0060075K1 - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0060075K1 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • Optimized package with separate driver source pin • Lower profile TO.

C3M0065090D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0065090D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • C3M SiC MOSFET technology • High blocking volta.

C3M0065090D - Silicon Carbide Power MOSFET (Cree)
VDS 900 V C3M0065090D ID @ 25˚C 36 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode .

TAGS

C3M0060065D Silicon Carbide Power MOSFET CREE

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