C3M0060065J Datasheet - Wolfspeed

C3M0060065J, Silicon Carbide Power MOSFET

C3M0060065J Silicon Carbide Power MOSFET C3MTM MOSFET Technology TAB N-Channel Enhancement Mode Drain Drain (TAB) .

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Datasheet Details

Part number:

C3M0060065J

Manufacturer:

Wolfspeed

File Size:

819.09 KB

Description:

Silicon Carbide Power MOSFET

Features

* 3rd Generation SiC MOSFET technology
* Low inductance package with driver source pin
* 7mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High speed switching with low capacitances
* Fast intrinsic diod

Applications

* EV charging
* Server power supplies
* Solar PV inverters
* UPS
* DC/DC converters Ordering Part Number C3M0060065J Package TO-263-7 Marking C3M0060065J Benefits
* Higher system efficiency
* Reduced cooling requirements
* Increased

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C3M0060065J Silicon Carbide Power MOSFET Wolfspeed

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