C3M0060065D Datasheet, Mosfet, Wolfspeed

C3M0060065D Features

  • Mosfet
  • 3rd Generation SiC MOSFET technology
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode

PDF File Details

Part number:

C3M0060065D

Manufacturer:

Wolfspeed

File Size:

768.26kb

Download:

📄 Datasheet

Description:

Silicon carbide power mosfet.

Datasheet Preview: C3M0060065D 📥 Download PDF (768.26kb)
Page 2 of C3M0060065D Page 3 of C3M0060065D

C3M0060065D Application

  • Applications
  • EV charging
  • Server power supplies
  • Solar PV inverters
  • UPS
  • DC/DC converters Wolfspeed,

TAGS

C3M0060065D
Silicon
Carbide
Power
MOSFET
Wolfspeed

📁 Related Datasheet

C3M0060065D - Silicon Carbide Power MOSFET (CREE)
VDS 650 V C3M0060065D ID @ 25˚C 29 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 60 mΩ N-Channel Enhancement Mode .

C3M0060065J - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0060065J Silicon Carbide Power MOSFET C3MTM MOSFET Technology TAB N-Channel Enhancement Mode Drain Drain (TAB) Features • 3rd Generation SiC .

C3M0060065K - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0060065K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Drain (Pin 1, TAB) Features • 3rd Generation SiC MOSFET.

C3M0060065K - Silicon Carbide Power MOSFET (CREE)
VDS C3M0060065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) N-Channel Enhancement Mode Features Package 650 .

C3M0060065L - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0060065L Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode F eature s • 3rd generation SiC MOSFET technology .

C3M0060075K1 - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0060075K1 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • Optimized package with separate driver source pin • Lower profile TO.

C3M0065090D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0065090D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • C3M SiC MOSFET technology • High blocking volta.

C3M0065090D - Silicon Carbide Power MOSFET (Cree)
VDS 900 V C3M0065090D ID @ 25˚C 36 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode .

C3M0065090J - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0065090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain Features (TAB) • New C3M Silicon Car.

C3M0065090J - Silicon Carbide Power MOSFET (Cree)
C3M0065090J VDS ID @ 25˚C 900 V 35 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode Fe.

Stock and price

Wolfspeed
SICFET N-CH 650V 37A TO247-3
DigiKey
C3M0060065D
485 In Stock
Qty : 120 units
Unit Price : $9.76
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts