Datasheet Details
- Part number
- C3M0065100J
- Manufacturer
- CREE
- File Size
- 0.98 MB
- Datasheet
- C3M0065100J-CREE.pdf
- Description
- Silicon Carbide Power MOSFET
C3M0065100J Description
VDS 1000 V C3M0065100J ID @ 25˚C 32 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode .
C3M0065100J Features
* Package
* C3MTM SiC MOSFET technology
TAB
* Low parasitic inductance with separate driver source pin
Drain
* 7mm of creepage distance between drain and source
* High blocking voltage with low On-resistance
* Fast intrinsic diode with low reverse recove
C3M0065100J Applications
* Renewable energy
* EV battery chargers
* High voltage DC/DC converters
* Switch Mode Power Supplies
1234567 G KS S S S S S
Drain (TAB)
Gate (Pin 1)
Driver Source (Pin 2)
Power Source (Pin 3,4,5,6,7)
Part Number
Package
Marking
C3M0065100J
TO-263-7
C3M006
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