* Package
* C3MTM SiC MOSFET technology TAB
* Low parasitic inductance with separate driver source pin Drain
* 7mm of creepage distance between drain and source
* High blocking voltage with low On-resistance
* Fast intrinsic diode with low reverse recove
C3M0065100J Datasheet (0.98 MB)
C3M0065100J
CREE
0.98 MB
Silicon carbide power mosfet.
VDS
1000 V
C3M0065100J
ID @ 25˚C
32 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
65 mΩ
N-Channel Enhancement Mode
.
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