* Package
* C3MTM SiC MOSFET technology TAB
* Low parasitic inductance with separate driver source pin Drain
* 7mm of creepage distance between drain and source
* High blocking voltage with low On-resistance
* Fast intrinsic diode with low reverse recove
C3M0065100J Datasheet (0.98 MB)
C3M0065100J
CREE
0.98 MB
Silicon carbide power mosfet.
VDS 1000 V C3M0065100J ID @ 25˚C 32 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode .
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