* Package
* 3rd generation SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
C3M0016120K Datasheet (1.03 MB)
C3M0016120K
CREE
1.03 MB
Silicon carbide power mosfet.
VDS 1200 V
C3M0016120K
ID @ 25˚C
115 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 16 mΩ
N-Channel Enhancement Mode.
📁 Related Datasheet
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(CREE)
VDS 1200 V
C3M0016120D
ID @ 25˚C
115 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 16 mΩ
N-Channel Enhancement Mode.
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RDS(on) 21 mΩ
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