Datasheet Details
- Part number
- C3M0120100J
- Manufacturer
- CREE
- File Size
- 777.92 KB
- Datasheet
- C3M0120100J-CREE.pdf
- Description
- Silicon Carbide Power MOSFET
C3M0120100J Description
VDS 1000 V C3M0120100J ID @ 25˚C 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode.
C3M0120100J Features
* Package
* C3MTM SiC MOSFET technology
* Low parasitic inductance with separate driver source pin
* 7mm of creepage distance between drain and source
* High blocking voltage with low On-resistance
* Fast intrinsic diode with low reverse recovery (Qrr)
C3M0120100J Applications
* Renewable energy
* EV battery chargers
* High voltage DC/DC converters
* Switch Mode Power Supplies
Part Number C3M0120100J
Drain (TAB)
Gate (Pin 1)
Driver Source (Pin 2)
Power Source (Pin 3,4,5,6,7)
Package TO-263-7
Mark
📁 Related Datasheet
📌 All Tags