* Package
* C3MTM SiC MOSFET technology
* Low parasitic inductance with separate driver source pin
* 7mm of creepage distance between drain and source
* High blocking voltage with low On-resistance
* Fast intrinsic diode with low reverse recovery (Qrr)
C3M0120100J Datasheet (777.92 KB)
C3M0120100J
CREE
777.92 KB
Silicon carbide power mosfet.
VDS 1000 V
C3M0120100J
ID @ 25˚C
22 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 120 mΩ
N-Channel Enhancement Mode.
📁 Related Datasheet
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Features
• C3MTM SiC MOSFET techno.
C3M0120100K - Silicon Carbide Power MOSFET
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C3M0120100K
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Silicon Carbide Power MOSFET TM
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N-Channel Enhancement Mode .
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C3M0120065D
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