* Package
* C3MTM SiC MOSFET technology
* Low parasitic inductance with separate driver source pin
* 7mm of creepage distance between drain and source
* High blocking voltage with low On-resistance
* Fast intrinsic diode with low reverse recovery (Qrr)
C3M0120100J Datasheet (777.92 KB)
C3M0120100J
CREE
777.92 KB
Silicon carbide power mosfet.
VDS 1000 V C3M0120100J ID @ 25˚C 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode.
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