Datasheet4U.com

C3M0120100J - Silicon Carbide Power MOSFET

Product Overview

CREE

📥 Download Datasheet

C3M0120100J Silicon Carbide Power MOSFET by CREE - Datasheet Preview — Datasheet preview – C3M0120100J

Datasheet Details

Part number	C3M0120100J
Manufacturer	CREE
File Size	777.92 KB
Description	Silicon Carbide Power MOSFET
Datasheet	C3M0120100J Datasheet
Additional preview pages of the C3M0120100J datasheet.

Product details

Features

Package.
C3MTM SiC MOSFET technology.
Low parasitic inductance with separate driver source pin.
7mm of creepage distance between drain and source.
High blocking voltage with low On-resistance.
Fast intrinsic diode with low reverse recovery (Qrr).
Low output capacitance (60pF).
Halogen free, RoHS compliant Benefits.
Reduce switching losses and minimize gate ringing.
Higher system efficiency.
Redu.

📁 Similar Datasheet

C3M0120065D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0120065J - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0120065K - Silicon Carbide Power MOSFET (Cree)
C3M0120065L - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0120090D - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0120090J - Silicon Carbide Power MOSFET (Wolfspeed)
C3M0160120D - N-Channel Power MOSFET (Wolfspeed)
C3M0160120J - Silicon Carbide Power MOSFET (Wolfspeed)

Other Datasheets by CREE

C3M0120100K - Silicon Carbide Power MOSFET
C3M0016120D - Silicon Carbide Power MOSFET
C3M0016120K - Silicon Carbide Power MOSFET
C3M0021120D - Silicon Carbide Power MOSFET
C3M0021120K - Silicon Carbide Power MOSFET
C3M0030090K - Silicon Carbide Power MOSFET

Published: Mar 23, 2018 |