Datasheet Details
- Part number
- C3M0120065J
- Manufacturer
- Wolfspeed
- File Size
- 756.39 KB
- Datasheet
- C3M0120065J-Wolfspeed.pdf
- Description
- Silicon Carbide Power MOSFET
C3M0120065J Description
C3M0120065J Silicon Carbide Power MOSFET C3MTM MOSFET Technology TAB N-Channel Enhancement Mode Drain Drain (TAB) .
C3M0120065J Features
* 3rd Generation SiC MOSFET technology
* Low inductance package with driver source pin
* 7mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High speed switching with low capacitances
* Fast intrinsic diod
C3M0120065J Applications
* Solar inverters
* DC/DC converters
* Switch Mode Power Supplies
* EV battery chargers
* UPS
Benefits
* Higher system efficiency
* Reduced cooling requirements
* Increased power density
* Increased system switching frequency
📁 Related Datasheet
📌 All Tags