C3M0120065J Datasheet - Wolfspeed

C3M0120065J, Silicon Carbide Power MOSFET

C3M0120065J Silicon Carbide Power MOSFET C3MTM MOSFET Technology TAB N-Channel Enhancement Mode Drain Drain (TAB) .

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Datasheet Details

Part number:

C3M0120065J

Manufacturer:

Wolfspeed

File Size:

756.39 KB

Description:

Silicon Carbide Power MOSFET

Features

* 3rd Generation SiC MOSFET technology
* Low inductance package with driver source pin
* 7mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High speed switching with low capacitances
* Fast intrinsic diod

Applications

* Solar inverters
* DC/DC converters
* Switch Mode Power Supplies
* EV battery chargers
* UPS Benefits
* Higher system efficiency
* Reduced cooling requirements
* Increased power density
* Increased system switching frequency

C3M0120065J Distributors

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C3M0120065J Silicon Carbide Power MOSFET Wolfspeed

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