C3M0120065L Datasheet (891.87 KB)
C3M0120065L
Wolfspeed
891.87 KB
Silicon carbide power mosfet.
C3M0120065L
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology
N-Channel Enhancement Mode F eature s
* 3rd generation SiC MOSFET tec.
📁 Related Datasheet
C3M0120065D - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0120065D
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode
Features • 3rd Generation SiC MOSFET technology • High bl.
C3M0120065D - Silicon Carbide Power MOSFET
(Cree)
VDS
650 V
C3M0120065D
ID @ 25˚C
22 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
120 mΩ
N-Channel Enhancement Mode
.
C3M0120065J - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0120065J
Silicon Carbide Power MOSFET C3MTM MOSFET Technology
TAB
N-Channel Enhancement Mode
Drain
Drain (TAB)
Features • 3rd Generation SiC .
C3M0120065K - Silicon Carbide Power MOSFET
(Cree)
VDS
650 V
C3M0120065K
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
ID @ 25˚C RDS(on)
22 A 120 mΩ
N-Channel Enhancement Mode
Fe.
C3M0120065K - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0120065K
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode
Drain (Pin 1, TAB)
Features • C3MTM SiC MOSFET technolo.
C3M0120090D - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0120090D
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode
Features • C3M SiC MOSFET technology • High blocking volta.
C3M0120090D - Silicon Carbide Power MOSFET
(Cree)
VDS
900 V
C3M0120090D
ID @ 25˚C
23 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
120 mΩ
N-Channel Enhancement Mode
.
C3M0120090J - Silicon Carbide Power MOSFET
(Wolfspeed)
C3M0120090J
Silicon Carbide Power MOSFET C3MTM MOSFET Technology
N-Channel Enhancement Mode TAB Drain
Features • New C3M SiC MOSFET technology • Hig.
