C3M0120090J Silicon Carbide Power MOSFET

Cree

Description

C3M0120090J VDS ID @ 25˚C 900 V 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode F.

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Datasheet Specifications

Part number: C3M0120090J
Manufacturer: Cree
File Size: 0.96 MB
Datasheet: C3M0120090J-Cree.pdf
Description: Silicon Carbide Power MOSFET

Features

* New C3M SiC MOSFET technology
* High blocking voltage with low On-resistance
* High speed switching with low capacitances
* New low impedance package with driver source
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compl

Applications

* Renewable energy
* EV battery chargers
* High voltage DC/DC converters
* Switch Mode Power Supplies
* Lighting Package TAB Drain 1 2 34 5 6 7 G KS S S S S S Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Part Number C3M01

C3M0120090J Distributors

📁 Related Datasheet

C3M0120090D C3M0120065D C3M0120065J C3M0120065L C3M0120100J C3M0120100K

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C3M0120090J Silicon Carbide Power MOSFET Cree

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