* New C3M SiC MOSFET technology
* High blocking voltage with low On-resistance
* High speed switching with low capacitances
* New low impedance package with driver source
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compl
C3M0120090J Datasheet (0.96 MB)
C3M0120090J
Cree
0.96 MB
Silicon carbide power mosfet.
C3M0120090J
VDS ID @ 25˚C
900 V 22 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
120 mΩ
N-Channel Enhancement Mode
F.
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