Datasheet Details
- Part number
- C3M0040120D
- Manufacturer
- Cree
- File Size
- 851.76 KB
- Datasheet
- C3M0040120D-Cree.pdf
- Description
- Silicon Carbide Power MOSFET
C3M0040120D Description
VDS 1200 V C3M0040120D ID @ 25˚C 66 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 40 mΩ N-Channel Enhancement Mode .
C3M0040120D Features
* Package
* 3rd generation SiC MOSFET technology
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
Benefits
* Reduce s
C3M0040120D Applications
* Solar inverters
* EV motor drive
* High voltage DC/DC converters
* Switched mode power supplies
Part Number C3M0040120D
Package TO 247-3
Marking C3M0040120D
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
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