* Package
* 3rd generation SiC MOSFET technology
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits
* Reduce s
C3M0040120D Datasheet (851.76 KB)
C3M0040120D
Cree
851.76 KB
Silicon carbide power mosfet.
VDS
1200 V
C3M0040120D
ID @ 25˚C
66 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
40 mΩ
N-Channel Enhancement Mode
.
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