C3M0045065J1 - Silicon Carbide Power MOSFET
C3M0045065J1 Features
* 3rd generation SiC MOSFET technology
* Optimized package with separate driver source pin
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free
