C3M0120090D Silicon Carbide Power MOSFET

Cree

Description

VDS 900 V C3M0120090D ID @ 25˚C 23 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: C3M0120090D
Manufacturer: Cree
File Size: 961.77 KB
Datasheet: C3M0120090D-Cree.pdf
Description: Silicon Carbide Power MOSFET

Features

* Package
* C3M SiC MOSFET technology
* High blocking voltage with low On-resistance
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant Benefits
* Higher system efficienc

Applications

* Renewable energy
* EV battery chargers
* High voltage DC/DC converters
* Switch Mode Power Supplies
* Lighting Part Number C3M0120090D Package TO-247-3 Marking C3M0120090 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value

C3M0120090D Distributors

📁 Related Datasheet

C3M0120090J C3M0120065D C3M0120065J C3M0120065L C3M0120100J C3M0120100K

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C3M0120090D Silicon Carbide Power MOSFET Cree

Cree C3M0120090D-like datasheet