* Package
* C3M SiC MOSFET technology
* High blocking voltage with low On-resistance
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant Benefits
* Higher system efficienc
C3M0120090D Datasheet (961.77 KB)
C3M0120090D
Cree
961.77 KB
Silicon carbide power mosfet.
VDS 900 V C3M0120090D ID @ 25˚C 23 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode .
📁 Related Datasheet
C3M0120090D Silicon Carbide Power MOSFET (Wolfspeed)
C3M0120090J Silicon Carbide Power MOSFET (Wolfspeed)
C3M0120090J Silicon Carbide Power MOSFET (Cree)
C3M0120065D Silicon Carbide Power MOSFET (Wolfspeed)
C3M0120065D Silicon Carbide Power MOSFET (Cree)
C3M0120065J Silicon Carbide Power MOSFET (Wolfspeed)
C3M0120065K Silicon Carbide Power MOSFET (Cree)
C3M0120065K Silicon Carbide Power MOSFET (Wolfspeed)
C3M0120065L Silicon Carbide Power MOSFET (Wolfspeed)
C3M0120100J Silicon Carbide Power MOSFET (CREE)
